t4 - lds - 0230 - 1, rev . 1 (111 901 ) ?2011 microsemi corporation page 1 of 5 1n5550us thru 1n5554us available on commercial versions voidless herm e tically sealed surface mount standard recovery glass rectifiers qualified to mil -prf- 19500/420 qualified levels : jan, jantx, jantxv and jans description this standard recovery surface mount rectifier diode series is military qu alified and is ideal for high - reliability applications where a failure cannot be tolerated. these industry - recognized 5.0 a mp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless - glass construction using an internal category 1 metallurgical bond. these devices are also available in axial - leaded packages for thru - hole mounting. microsemi also offers numerous other rectifier products to meet high er and lower current ratings with various recovery time speeds. b sq - melf (d - 5b) package also available in : b package (axial - leaded) 1n5550 C 1n5554 important: for the latest information, visit our website http://www.microsemi.com . features ? surface mount equivalent of jedec registered 1n55 50 thru 1n5554 series . ? vo idless hermetically sealed glass package. ? extremely robust construction. ? quadruple - layer passivation. ? internal category 1 m etallurgical bonds. ? jan, jantx, jantxv and jans qu alifi ed versions available per mil - prf - 19500/420 . ? rohs compliant versions available (commercial grade only) . applications / benefits ? standard recovery 5 a mp 200 to 1000 volts rectifiers series. ? military and other high - reliability applications. ? general rectifier applications including bridges, half - bridges, catch diodes, etc. ? high forward surge current capability. ? low thermal resistance. ? controlled avalanche with peak reverse power capability. ? extremely robust construction. ? inherently radiation hard as described in microsemi micronote 050 . m axim um ratings @ t a = 25 o c unless otherwise noted. msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction and storage temperature t j and t stg - 65 to +175 o c thermal resistance junction - to - end cap r ? j ec 6.5 o c /w thermal impedance @ 10 ms heating time (1) z ? jx 1.5 o c /w maximum forward surge current (8.3 ms half sine) i fsm 100 a average rectified forward current (2) @ t ec = 130 o c i o (l) 5 a average rectified forward current (3) @ t a = 55 o c @ t a = 100 o c i o 2 (2) i o 3 (4) 3 2 a a working peak reverse voltage 1n55 5 0us 1n55 5 1us 1n55 5 2us 1n55 5 3us 1n55 5 4us v rw m 200 400 600 800 1000 v solder temperature @ 10 s t sp 260 o c see notes on next page. downloaded from: http:///
t4 - lds - 0230 - 1, rev . 1 (111 901 ) ?2011 microsemi corporation page 2 of 5 1n5550us thru 1n5554us m axim um ratings notes : 1. derate linearly at 66.6 ma/oc above t ec = 100 oc. an i o of up to 6 amps is allowable provided that appropriate heat sinking or forced air cooling maintains the junction temperature at or below +200 o c . 2. derate linearly at 22.2 ma/oc from + 55 oc to +100 o c. 3. these i o ratings are for a thermally (pc boards or other) mounting methods where the lead o r end - cap temperatures cannot be maintained and where thermal resistance from mounting point to ambient is still suffi ciently controlled where t j ( ma x) does not exceed 175 o c. this equates to r jx 47 oc/w. 4. derate line arly at 26.7 ma/c above t a = +100 c to +175 c ambient. mechanical and packaging ? case: hermetically sealed voidless hard glass with t ungsten slugs . ? terminals: end caps are c opper with t in/ l ead (sn/pb) finish. rohs compliant matte -t in is available for commercial only. ? marking: cathode band only. ? polarity: cathode indicated by band. ? tape & reel option: standard per eia - 481 - b. consult factory for quantities. ? weight: 539 milligrams. ? see p ackage d imensions and recommended p ad l ayout on last page. part nomenclature jan 1n5550 us (e3) reliability level jan = jan level jantx = jantx level jantxv = jantxv level jans = jans level blank = commercial jedec type number see e lectrical characteristics t able rohs compliance e3 = rohs c ompliant ( available on commercial grade only ) blank = non - rohs c ompliant melf package symbols & definitions symbol definition v br minimum breakdown voltage: the minimum voltage the device will exhibit at a specified current . v rwm working peak reverse voltage: the maximum peak voltage that can be applied over the operating temperature range excluding all transient voltages (ref jesd282 - b). i o average rectified output current: the output current averaged over a full cycle with a 50 hz or 60 hz si ne - wave input and a 180 degree conduction angle. v f maximum forward voltage: the maximum forward voltage the device will exhibit at a specified curr e nt. i r maximum reverse current: the maximum reverse (leakage) current that will flow at the sp ecified voltage and temperature. t rr reverse recovery time: the time interval between the instant the current passes through zero when changing f rom the forward direction to the reverse direction and a specified decay point after a peak reverse current occ urs. downloaded from: http:///
t4 - lds - 0230 - 1, rev . 1 (111 901 ) ?2011 microsemi corporation page 3 of 5 1n5550us thru 1n5554us electrical characteristics @ t a = 25 o c unless otherwise noted. type minimum breakdown voltage v br i r @ 50 a volts forward voltage v f @ 9 a ( pk) maximum reverse current i r @ v rwm a reverse recovery t rr (note 1) s min. volts max . volts 1n5550us 220 0.6 v (pk) 1.2 v (pk) 1.0 2.0 1n5551us 440 0.6 v (pk) 1.2 v (pk) 1.0 2.0 1n5552us 660 0.6 v (pk) 1.2 v (pk) 1.0 2.0 1n5553us 880 0.6 v (pk) 1.3 v (pk) 1.0 2.0 1n5554us 1100 0.6 v (pk) 1.3 v (pk) 1.0 2.0 note 1: i f = 0.5 a, i rm = 1.0 a, i r(rec) = .250 a. downloaded from: http:///
t4 - lds - 0230 - 1, rev . 1 (111 901 ) ?2011 microsemi corporation page 4 of 5 1n5550us thru 1n5554us graphs t h heating time (seconds) figure 1 maximum thermal impedance v f C f orward voltage (v) figure 4 typical forwa rd voltage vs. forward current z ? jx ( o c/w att) i f C f orward current (a) downloaded from: http:///
t4 - lds - 0230 - 1, rev . 1 (111 901 ) ?2011 microsemi corporation page 5 of 5 1n5550us thru 1n5554us package dimensions notes: 1. dimensions are in inches. 2. millimeters are given for general information only. 3. dimensions are pre - solder dip. 4. minimum clearance of glass body to mounting surface on all orientations. 5. in accordance with asme y14.5m, diameters are equivalent to x symbology. 6. this package outline has also previously been identified as d5b. pad layout ltr i nch m illimeters min max min max bl .200 .2 75 5.08 6.99 bd .137 .1 86 3.48 4.72 ect .019 .0 34 0.48 0.86 s .003 --- 0.08 --- ltr i nch m illimeters a 0.288 7.32 b 0.070 1.78 c 0.155 3.94 note: if mounting requires adhesive separate from the solder, an additional 0.080 inch d iameter contact may be placed in the center between the pads as an optional spot for cement. downloaded from: http:///
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